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The experimental dependence of microwave noise temperature on supplied electric power is used to study hot phonons in an InP -based modulation - doped In0.52Al0.48As/In0.53Ga0.47As/In0.7Ga0.3As ...
the heterointerface. Semicond. Sci. Technol. 5 (1990) 59G595. Printed in the UK ~~ ~ High electron mobility in modulation - 1 doped Ga,ln, -, As/AI Y In, -Y As heterostructures with highly strained AllnAs grown ...
the electrical properties of n -Al In As/i-Ga In As electron channel structures 0.48 0.52 0.30 0.70 for a high - electron - mobility transistor, grown on a lattice-matched InP substrate and lattice-mismatched GaAs (001 ...
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