Erratum: ‘‘Empty state and filled state image of Zn Ga acceptor in GaAs studied by scanning tunneling microscopy’’ Appl. Phys. Lett. 64, 1836 (1994)
Abstract
V3A150,2 thin film Erratum: â reparation of single-crystal by metalorganic chemical vapor depositionâ [Appl. Phys. Lett. 64, 1777 (1994)] &. R. Bai, H. L. M. Chang, and C. M. Foster Materials Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439 In our recent publication, the second authorâ name, H. Zhang, was inadvertently omitted. The correct byline should read: s G. R. Bai, H. Zhang, H. L. M. Chang, and C. M....