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Observation by Cyclotron Resonance of the Effect of Strain on Germanium and Silicon BY A. C. ROSE-INNES Services Electronics Research Laboratory, Baldock, Herts. MS. received 26th February 1958, and in final ...
Despite the experimental evidence in far-infrared that impurities are ionized within the electron -hole liquid in silicon and germanium , combination of luminescence data with millimeter wave cyclotron ...
oxide/ germanium surface by irradiating a nitrogen plasma stream generated by an electron - cyclotron - resonance plasma source without substrate heating. Excellent leakage ...
Silicon dioxide films on strained Si 1− x Ge x have been deposited by electron cyclotron resonance (ECR) plasma-enhanced chemical vapour deposition technique using tetraethylorthosilicate (TEOS ...
Electron - cyclotron - resonance (ECR) oxygen (O2) plasma was irradiated onto the surface of germanium (Ge) substrates prior to germanium nitride (GeNx) formation. Germanium metal–insulator–semiconductor ...
We report for the first time the modulated cyclotron resonance of electrons in the lattice-matched multi-quantum well structures of In0.53Ga0.47As/InP induced by monochromatic light beam ...
on measurements using secondary ion mass spectrometry (SIMS). After electron cyclotron resonance (ECR) plasma hydrogenation under optimal conditions, the density of trap states is markedly decreased in short ...
with oxygen. The etching selectivity between the TaGe alloy and the CrN was 13 when using electron - cyclotron - resonance plasma etching with sulfur hexafluoride (SF 6 ) gas. We have also investigated ...
on Silicon Substrates Using Electron Cyclotron Resonance Chemical Vapor Deposition div.banner_title_bkg div.trangle { border-color: #4A2B0C transparent transparent transparent; opacity:0.8; /*new styles start ...
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