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Diffraction patterns produced by quasi-elastically backscattered electrons focused in a thin single- crystal Si(100)2×1 near-surface layer have been studied. The measurements performed in the 0.6–2 ...
Kikuchi patterns produced by quasi-elastic backscattering of electrons with energies of 0.6–2 keV from a thin Si(111)7×7 near-surface layer are studied. It is shown that experimental data obtained ...
We studied the Ni-mediated crystallization of amorphous silicon (a-Si) as a function of its thickness. It was found that the orientation of the poly-Si changed from [110] to [001] when its thickness ...
and electron backscattered diffraction (EBSD) measurements. Poly-Si film with (111)-preferential orientation was obtained by the layer exchange of the initial amorphous silicon (a-Si)/Al/glass into Al/poly-Si ...
-ray diffraction and Rutherford backscattering measurements indicate the deposits are stoichiometric silicon nitride with varying amounts of the α and β phases. Scanning electron microscopy imaging ...
grown GaN films are developed. Applied Physics Express 12, 025501 (2019) LETTER https://doi.org/10.7567/1882-0786/aafb26 Pole figure analysis from electron backscatter diffraction—an effective method ...
CW-diode laser crystallization of amorphous silicon (a-Si) deposited by sputtering or by electron beam evaporation onto different substrates (glass without or with SiNx or SiO2 intermediate layers ...
Thin chromium films, 60 nm thick, were deposited onto single- crystal silicon wafers. The samples were irradiated with 30 ns single pulses from a Nd: glass laser at fluences ranging from 0.4 to 2.25 J ...
The physical properties and oxidation behavior of silicon carbide thin films are reported. These films were RF sputtered from a composite target of stoichiometric proportion onto thermally oxidized ...
The laser crystallization (LC) of amorphous silicon thin films into polycrystalline silicon (pc-Si) thin films on glass substrates is an active field of research in the fabrication of Si-based thin ...
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