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Dose rate dependence and time constant of the ion‐beam‐induced crystallization mechanism in silicon

Linnros, J.; Holmén, G.
Journal of Applied Physics , Volume 62 (12) American Institute of Physics – Dec 15, 1987
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Title
Dose rate dependence and time constant of the ion‐beam‐induced crystallization mechanism in silicon
Author(s)
Linnros, J.; Holmén, G.
Journal
Journal of Applied Physics , Volume 62 (12) American Institute of Physics – Dec 15, 1987
Publisher
American Institute of Physics
Copyright
Copyright © 1987 American Institute of Physics
ISSN
0021-8979
eISSN
1089-7550
D.O.I.
10.1063/1.339027
Publisher site
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