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. In this study, shallow p+/n junctions were formed by non‐melt annealing implanted samples using a green laser (visible laser). The dopant diffusion , activation , and recrystallization of an amorphous silicon layer ...
process with an activation energy value of 3.46 eV, which is equal to the value of boron diffusion in the amorphous region that regrows to a single crystal. RTA yields low sheet resistances compared ...
to the implantation doses of carbon and boron , indicating that the pairing of carbon and boron atoms prevents boron activation . However, carbon prevented further deactivation during additional furnace annealing at 750 ...
the electric field issued from dopant activation in the fastly recrystallized amorphous layer due to arsenic implantation in the upper region of the LPCVD film has a lesser effect. Transmission electron ...
detectors, based on liquid-phase-epitaxy (LPE) in tilting and dipping technique and on planar array technology with Hg- Diffusion and ion implantation for pn-junction formation and CdTe/ZnS passivation. Linear ...
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