In this paper we discuss the energy band structure of bilayer graphene nanoribbons (BGNRs) near the Fermi level between zero and 3k B T away from the conduction and valence bands. BGNRs can be used as the channel in field effect transistors (FETs). A FET can be created using graphene bilayers with the gate voltage perpendicular to the layers. We focus on carrier statistics in the degenerate regime and the density of states, and consider them to be fundamental properties of BGNRs. The model presented indicates that the normalized Fermi energy in the degenerate regime strongly depends on carrier concentration and is independent of temperature.
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BILAYER GRAPHENE NANORIBBON CARRIER STATISTICS IN THE DEGENERATE REGIME
Mousavi, S. M.; Ahmadi, M. T.; Webb, J. F.; Sadeghi, H.; Nilghaz, A.; Amin, A.; Johari, Z.; Ismail, R.
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, Volume 1337 (1)
American Institute of Physics – Jun 20, 2011
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