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We report the growth of GaAs / AlGaAs coreshell nanowires (NWs) on GaAs ( 111 )Bsubstrates by Au-assisted molecular beam epitaxy . Electron microscopy shows theformation of a wurtzite AlGaAs shell ...
We investigate the Au-assisted growth of InAs nanowires on two differentkinds of heterostructured substrates: GaAs / AlGaAs structures capped by a50 nm thick InAs layer grown by molecular beam epitaxy ...
heterostructure . The latter was consolidated by temperature-dependent photoluminescence spectroscopy. GaAs / AlGaAs core–shell nanowires (NWs) were grown on Si( 111 ) by Ga-assisted molecular beam epitaxy via the vapor ...
We have grown an AlGaAs / GaAs double- heterostructure (DH) light-emitting diode (LED) on a GaAs ( 111 )A-5°-misoriented substrate using only Si dopant by molecular beam epitaxy . Conduction type ...
Slip lines in the molecular beam epitaxial wafer bonded with In during the growth have been eliminated by using ( 111 )-oriented GaAs substrates instead of the usual (100)-oriented ones. AlGaAs double ...
GaAs / AlGaAs graded-index, separate confinement heterostructure quantum-well lasers with an extremely low threshold current density (Jth) were grown by molecular beam epitaxy on 0.5° misoriented ( 111 ...
emitters, molecular beam epitaxy INTRODUCTION Epitaxial self-assembled III–V quantum dots (QDs), so-called ‘artificial atoms’, are of particular interest for single-photon emission, owing to their stability ...
. Microphotoluminescence of oval defects in a GaAs layer grown by molecular beam epitaxy , Appl. Phys. Lett. , 1998, vol. 73 (pg. 2012- 2014) Google Scholar CrossRef Search ADS 11 Ohno Y. Polarized light emission from ...
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