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1.54‐μm electroluminescence of erbium‐doped silicon grown by molecular beam epitaxy

Ennen, H.; Pomrenke, G.; Axmann, A.; Eisele, K.; Haydl, W.; Schneider, J.
Applied Physics Letters , Volume 46 (4) American Institute of Physics – Feb 15, 1985
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Title
1.54‐μm electroluminescence of erbium‐doped silicon grown by molecular beam epitaxy
Author(s)
Ennen, H.; Pomrenke, G.; Axmann, A.; Eisele, K.; Haydl, W.; Schneider, J.
Journal
Applied Physics Letters , Volume 46 (4) American Institute of Physics – Feb 15, 1985
Publisher
American Institute of Physics
Copyright
Copyright © 1985 American Institute of Physics
ISSN
0003-6951
eISSN
0003-6951
D.O.I.
10.1063/1.95639
Publisher site
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